A New Lateral SiGe-Base PNM Schottky Collector Bipolar Transistor on SOI for Non-saturating VLSI Logic Design
نویسندگان
چکیده
A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky Collector Bipolar Transistor (SCBT) in Silicon-On-Insulator (SOI) substrate is explored using two-dimensional (2-D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.
منابع مشابه
A New Lateral PNM Schottky Collector Bipolar Transistor (SCBT) on SOI for Nonsaturating VLSI Logic Design
The novel characteristics of a new lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) are explored using two-dimensional (2-D) simulation. The collector-base junction of the proposed lateral PNM transistor consists of a Schottky junction between n-base (N) and metal (M). The characteristics of this structure are compared with that of lateral PNP transistors o...
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